Oleyl group-functionalized insulating gate transistors for measuring extracellular pH of floating cells

نویسندگان

  • Yuki Imaizumi
  • Tatsuro Goda
  • Yutaro Toya
  • Akira Matsumoto
  • Yuji Miyahara
چکیده

The extracellular ionic microenvironment has a close relationship to biological activities such as by cellular respiration, cancer development, and immune response. A system composed of ion-sensitive field-effect transistors (ISFET), cells, and program-controlled fluidics has enabled the acquisition of real-time information about the integrity of the cell membrane via pH measurement. Here we aimed to extend this system toward floating cells such as T lymphocytes for investigating complement activation and pharmacokinetics through alternations in the plasma membrane integrity. We functionalized the surface of tantalum oxide gate insulator of ISFET with oleyl-tethered phosphonic acid for interacting with the plasma membranes of floating cells without affecting the cell signaling. The surface modification was characterized by X-ray photoelectron spectroscopy and water contact angle measurements. The Nernst response of -37.8 mV/pH was obtained for the surface-modified ISFET at 37 °C. The oleyl group-functionalized gate insulator successfully captured Jurkat T cells in a fluidic condition without acute cytotoxicity. The system was able to record the time course of pH changes at the cells/ISFET interface during the process of instant addition and withdrawal of ammonium chloride. Further, the plasma membrane injury of floating cells after exposure by detergent Triton™ X-100 was successfully determined using the modified ISFET with enhanced sensitivity as compared with conventional hemolysis assays.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Single-Walled Carbon-Nanotubes-Based Organic Memory Structures.

The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs), metal-insulator-semiconductor (MIS) and thin film transistor (TFT) structures, using poly(methyl methacrylate) (PMMA) as the gate dielectric, are reported. The drain and source electrodes were fabricated by evaporating 50 nm gold, and the gate electrode was made from 50 nm-evaporated alumini...

متن کامل

Modeling of Gate Leakage, Floating Body Effect, and History Effect in 32nm HKMG PD-SOI CMOS

The High-K Metal Gate (HKMG) technology has become the keystone to reduce gate leakage and enable the continuous scaling of transistors towards 32nm node and beyond. However, the reduction of gate leakage in 32nm HKMG PD (Partially Depleted)-SOI (Silicon-On-Insulator) CMOS (Complementary Metal–Oxide–Semiconductor) inevitably changes the modeling methods for gate current, floating body effect, a...

متن کامل

A Micropower Multi Decade Dynamic Range Current-Mode True RMS-to-DC Converter

A log-domain current-mode true RMS-to-DC converter based on a novel synthesis of a simplified current-mode low pass filter and a two-quadrant squarer/divider is presented. The circuit employs floating gate MOS (FG-MOS) transistors operating in weak inversion region. The converter features low power(

متن کامل

Non-Faradaic Electrochemical Detection of Exocytosis from Mast and Chromaffin Cells Using Floating-Gate MOS Transistors

We present non-faradaic electrochemical recordings of exocytosis from populations of mast and chromaffin cells using chemoreceptive neuron MOS (CνMOS) transistors. In comparison to previous cell-FET-biosensors, the CνMOS features control (CG), sensing (SG) and floating gates (FG), allows the quiescent point to be independently controlled, is CMOS compatible and physically isolates the transisto...

متن کامل

Programming Floating-Gate Circuits with UV-Activated Conductances

A programming technique for controlling the floating gates (FG) in ultra low-voltage (ULV) floating-gate circuits is presented. Simple ultra low-voltage floatinggate current scaling and level shifting circuits are discussed. The current scaling and level shifting are accomplished using only minimum sized transistors and floating capacitors. Floating-gate current multiplier and divider circuits ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره 17  شماره 

صفحات  -

تاریخ انتشار 2016